Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlattices
✍ Scribed by Shu-Lin Zhang; M.V. Klein; J. Klem; H. Morkoç
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 258 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0375-9601
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We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic
The use of Raman scattering in different polarization geometries makes it possible to observe the splitting of transverse optical (TO) phonon modes confined in GaAs/AlAs superlattices grown on faceted GaAs (311)A surfaces. The frequencies of TO modes with atomic displacements in the direction along