Competition between interface and bulk phonons in GaAs/AlAs and InAs/GaSb quantum wells
✍ Scribed by Marcos H. Degani; Oscar Hipólito
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 255 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
A. Sayari (a), A. Mlayah (b), F. F. Charfi (a), R. Carles (b), and R. Planel (c)
We studied the photoluminescence of (e1:hh1)1S excitons (X ) and negatively charged excitons (trions, X -) in quantum wells (QWs) having a low density (n e < 5 × 10 10 cm -2 ) two-dimensional electron gas (2DEG). Mixed type I-type II GaAs/AlAs quantum wells are studied in which the 2DEG is photogene
E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ