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MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wells

✍ Scribed by T. Noda; M.R. Fahy; T. Matsusue; B.A. Joyce; H. Sakaki


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
460 KB
Volume
127
Category
Article
ISSN
0022-0248

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA