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Some aspects on interface modes and LO eigenmodes in GaAs/AlAs quantum wells

✍ Scribed by C.D. Chen

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
258 KB
Volume
81
Category
Article
ISSN
0038-1098

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πŸ“œ SIMILAR VOLUMES

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The coupling of electrons to interface and slab optical optical phonon modes is studied in the presence of a high magnetic field in a GaAs/AIAs quantum well. The position of the Landau levels and the magneto-optical absorption spectrum for cyclotron resonance are calculated. We find that in narrow G

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E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ