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Interface optical phonon mode coupling in GaAs/AlAs quantum wells at high magnetic fields

✍ Scribed by G.Q. Hai; F.M. Peeters; J.T. Devreese

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
275 KB
Volume
184
Category
Article
ISSN
0921-4526

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✦ Synopsis

The coupling of electrons to interface and slab optical optical phonon modes is studied in the presence of a high magnetic field in a GaAs/AIAs quantum well. The position of the Landau levels and the magneto-optical absorption spectrum for cyclotron resonance are calculated. We find that in narrow GaAs/A1As quantum wells a substantial coupling of the electron to the interface phonons shows up near the LO-and TO-phonon modes of GaAs and AlAs.

πŸ“œ SIMILAR VOLUMES

Magnetophonon oscillation in photolumine
Magnetophonon oscillation in photoluminescence spectra of modulation-doped GaAs/AlGaAs quantum wells at high magnetic fields
✍ N. Kamata; E. Kanoh; K. Yamada; N. Miura πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 238 KB

In pulsed high magnetic fields up to 40 T perpendicular to layers, we investigated photoluminescence (PL) from quasizero-dimensional carriers in modulation-doped GaAs/A1GaAs quantum wells for various electron densities at 77 K. We observed an oscillation of PL intensity due to magnetophonon resonanc