Interface excitations in metal-insulator-semiconductor structures
β Scribed by Eguiluz, Adolfo; Lee, T. K.; Quinn, J. J.; Chiu, K. W.
- Book ID
- 120592954
- Publisher
- The American Physical Society
- Year
- 1975
- Tongue
- English
- Weight
- 329 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1098-0121
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π SIMILAR VOLUMES
The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in
Hybrid metal-insulator-semiconductor structures based on ethyl-hexyl substituted polyfluorene (PF2/6) as the active polymer semiconductor were fabricated on a highly doped p-Si substrate with Al 2 O 3 as the insulating oxide layer. We present detailed frequency-dependent capacitance-voltage (C-V) an