✍ Scribed by Bondarenko, G. G.; Andreev, V. V.; Loskutov, S. A.; Stolyarov, A. A.
No coin nor oath required. For personal study only.
The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of interface characteristics such as the interface states density, the flat band voltage, the surface potential value for a given bias and the potential barrier height on the injection interface. In addition, the method enables us to determine the charge degradation parameters of the MIS structure under and after high-field stressing.
📜 SIMILAR VOLUMES
Scattering of a conduction electron by a charged shallow donor located near a semiconductor᎐insulator interface in the semiconductor or by a charged center embedded in the insulator is considered within the model of a hydrogenlike atom in a semi-infinite space. The interface influence is allowed for