The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in
Metal-insulator-semiconductor studies of lead telluride∗
✍ Scribed by D.A. Lilly; D.E. Joslin; H.K.A. Kan
- Publisher
- Elsevier Science
- Year
- 1978
- Weight
- 995 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0020-0891
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