Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal–insulator–semiconductor structure
✍ Scribed by X. M. Qian; D. Q. Qin; J. Y. Wang; J. Tang; F. Li; Y. B. Bai; T. J. Li; X. Y. Tang
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 136 KB
- Volume
- 75
- Category
- Article
- ISSN
- 0021-8995
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✦ Synopsis
Polyurethane/polybutyl-methacrylate interpenetrating polymer networks (IPNs) film was formed on n-Si substrate by the dropping technique. When aluminum (Al) was vacuum deposited on the top of the film, the Al/IPNs/n-Si (metal-insulatorsemiconductor) structure was fabricated successfully. With the aid of the high-frequency capacitance-voltage (C-V) characteristics at room temperature, the dielectric constant of IPNs was obtained. In the C-V curves, an increased hysteresis at high sweep voltage and a plateau in the depletion region were observed. This plateau indicates that the unsaturated bonds beyond IPNs film could act as electron well at the applied voltage above 10 V.