Hybrid metal-insulator-semiconductor structures based on ethyl-hexyl substituted polyfluorene (PF2/6) as the active polymer semiconductor were fabricated on a highly doped p-Si substrate with Al 2 O 3 as the insulating oxide layer. We present detailed frequency-dependent capacitance-voltage (C-V) an
β¦ LIBER β¦
Interface states in polymer metal-insulator-semiconductor devices
β Scribed by Torres, I.; Taylor, D. M.
- Book ID
- 121272929
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 473 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0021-8979
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