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Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures

✍ Scribed by S. G. Dmitriev; Yu. V. Markin

Book ID
110129459
Publisher
Springer
Year
2002
Tongue
English
Weight
85 KB
Volume
36
Category
Article
ISSN
1063-7826

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The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in