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Determining carrier mobility with a metal–insulator–semiconductor structure

✍ Scribed by P. Stallinga; A.R.V. Benvenho; E.C.P. Smits; S.G.J. Mathijssen; M. Cölle; H.L. Gomes; D.M. de Leeuw

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
207 KB
Volume
9
Category
Article
ISSN
1566-1199

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✍ Bondarenko, G. G.; Andreev, V. V.; Loskutov, S. A.; Stolyarov, A. A. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 79 KB 👁 1 views

The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in