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Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures

โœ Scribed by L. S. Berman; E. I. Belyakova; L. S. Kostina; E. D. Kim; S. C. Kim


Book ID
110120424
Publisher
Springer
Year
2000
Tongue
English
Weight
55 KB
Volume
34
Category
Article
ISSN
1063-7826

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The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in