𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Injection induced charging of HfO2 insulators on Si

✍ Scribed by V.V Afanas’ev; A Stesmans

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
97 KB
Volume
109
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

✦ Synopsis

Charge trapping in HfO 2 films on Si(1 0 0) was studied using generation of electron-hole pairs in the oxide by 10 eV photons. The oxide deposition chemistry strongly influences the density and sign of the trapped charge: positive charge is observed in films obtained from HfCl 4 and metallo-organics, while negative charge is dominant in the films grown from Hf(NO 3 ) 4 . The weak dependence of the trapped charge on the HfO 2 thickness suggests that charging is associated with a silicon oxide interlayer grown between the Si and HfO 2 during deposition. The latter is affirmed by enhancement of the charging after oxidation of the samples at 650 • C, indicating the interfacial silicon oxide as being the key factor determining the electrical stability of the HfO 2 insulating stacks.

📜 SIMILAR VOLUMES

e-Induced secondary electron emission yi
e-Induced secondary electron emission yield of insulators and charging effects
✍ J. Cazaux 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 548 KB

Based on a more realistic description of the in-depth secondary electron generation than that of standard (constant loss) model, a new model for the e-induced secondary electron emission yield, d = f(E 0 ), is applied to account for the observed mean atomic number dependence of the reduced yield cur

Probing defects at interfaces and interl
Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance
✍ A. Stesmans; V.V. Afanas’ev 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Electron spin resonance (ESR) spectroscopy enables to assess on atomic scale the nature and structural aspects of interfaces and interlayers in semiconductor/insulator hetero structures. This has been applied to (1 0 0)/insulator entities with nm-thin amorphous layers of HfO 2 and LaAlO 3 of high di