Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)
MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si
β Scribed by Xiangkun Yu; Lin Shao; Q.Y. Chen; L. Trombetta; Chunyu Wang; Bhanu Dharmaiahgari; Xuemei Wang; Hui Chen; K.B. Ma; Jiarui Liu; Wei-Kan Chu
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 142 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The 50 MeV Si^7+^ ion irradiation induced modifications on structural, dielectric, optical and mechanical properties of Vertical Bridgman grown benzimidazole (BMZ) crystals were studied. The high resolution Xβray diffraction studies show the quality of as grown BMZ and irradiated BMZ cr
The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o