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InGaP/GaAs HBT power amplifier with CMRC structure

✍ Scribed by C. K. Poek; B. P. Yan; E. S. Yang

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
137 KB
Volume
46
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequency of 1.95 GHz. When operated according to the WCDMA standard, it achieves P~out~ of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is βˆ’33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IM3 performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. Β© 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 84–88, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20908

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