## Abstract A novel programmable MMIC predistortion circuit as an input stage of a broadband power amplifier (PA) is proposed and designed. By varying its reference voltage, one can adjust the magnitude of gain expansion and negative phase deviation to compensate the typical nonlinearities of the f
Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications
✍ Scribed by Herbert Jäger; Andrei Grebennikov; Eugene Heaney; Robert Weigel
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 529 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the concept for highly efficient operation of DCS1800, PCS1900, CDMA2000, and WCDMA. PAE is greater than 50% at 30 dBm output power in the DCS1800 and PCS1900 bands, as well as better than 38% at 27 dBm output power and an ACLR of ؊37 dBc is achieved for WCDMA operation.
📜 SIMILAR VOLUMES
## Abstract A new linear high‐efficiency multichip module power amplifier (MCM PA) with 0.1 cm^3^ volume for TDMA cellular handset applications is developed using an __E__‐mode GaAs HJFET. Operating from a 3.5 V dc single‐polarity supply, the amplifier is targeted at a PAE of 55% for TDMA applicati