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Quasiclass-F high-efficiency power amplifier for wireless handset application using GaAs enhancement HJFET

✍ Scribed by H. Geng; Y. Hasegawa

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 189 KB
Volume: 31
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.10049

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✦ Synopsis

Abstract

A new linear high‐efficiency multichip module power amplifier (MCM PA) with 0.1 cm^3^ volume for TDMA cellular handset applications is developed using an E‐mode GaAs HJFET. Operating from a 3.5 V dc single‐polarity supply, the amplifier is targeted at a PAE of 55% for TDMA applications. The measured results indicate the attractiveness and advisability of the E‐mode GaAs HJFET used for cellular handset applications, and final output characteristics validate the proposed quasiclass‐F power amplifier design procedure. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 409–411, 2001.

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