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InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions

✍ Scribed by Florescu, D. I.; Ramer, J. C.; Lee, D. S.; Armour, E. A.

Book ID: 121833140
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 237 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1765743

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