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SPIE Proceedings [SPIE Symposium on Integrated Optics - San Jose, CA (Saturday 20 January 2001)] Light-Emitting Diodes: Research, Manufacturing, and Applications V - Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells

✍ Scribed by Wen, Tzu-Chi; Lee, Shih-Chang; Lee, Wei-I; Yao, H. Walter; Schubert, E. F.

Book ID: 120520792
Publisher: SPIE
Year: 2001
Weight: 238 KB
Volume: 4278
Category: Article
DOI: 10.1117/12.426844

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