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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 21 January 2012)] Physics and Simulation of Optoelectronic Devices XX - The impact of active layer design on quantum efficiency of InGaN light emitting diodes

✍ Scribed by Zhang, F.; Li, X.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Hong, S. M.; Yen, S. H.; Hsu, T. S.; Matulionis, A.; Witzigmann, Bernd; Osinski, Marek; Henneberger, Fritz; Arakawa, Yasuhiko


Book ID
115477831
Publisher
SPIE
Year
2012
Weight
442 KB
Volume
8255
Category
Article

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