SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 21 January 2012)] Physics and Simulation of Optoelectronic Devices XX - The impact of active layer design on quantum efficiency of InGaN light emitting diodes

✍ Scribed by Zhang, F.; Li, X.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Hong, S. M.; Yen, S. H.; Hsu, T. S.; Matulionis, A.; Witzigmann, Bernd; Osinski, Marek; Henneberger, Fritz; Arakawa, Yasuhiko

• Book ID: 115477831
• Publisher: SPIE
• Year: 2012
• Weight: 442 KB
• Volume: 8255
• Category: Article
• DOI: 10.1117/12.903931