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Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes

✍ Scribed by Lu, Taiping; Li, Shuti; Zhang, Kang; Liu, Chao; Yin, Yian; Wu, Lejuan; Wang, Hailong; Yang, Xiaodong; Xiao, Guowei; Zhou, Yugang

No coin nor oath required. For personal study only.

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