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InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

✍ Scribed by Chang, C S; Chang, S J; Su, Y K; Lin, Y C; Hsu, Y P; Shei, S C; Chen, S C; Liu, C H; Liaw, U H

Book ID
125513955
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
107 KB
Volume
18
Category
Article
ISSN
0268-1242

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