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Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation

✍ Scribed by Hung-Wen Huang; C.C. Kao; J.T. Chu; W.D. Liang; H.C. Kuo; S.C. Wang; C.C. Yu

Book ID: 113781836
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 260 KB
Volume: 99
Category: Article
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2005.11.013

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## Abstract InGaN/GaN blue light‐emitting diodes (LEDs) on sapphire substrates with a SiO~2~/TiO~2~ Bragg reflector were fabricated. The deposited SiO~2~/TiO~2~ Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO~2~/TiO~2~ Bragg ref