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Ultraviolet electroluminescence fromn-ZnO/i-MgO/p+-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering

โœ Scribed by Zhu, G. Y.; Li, J. T.; Shi, Z. L.; Lin, Y.; Chen, G. F.; Ding, T.; Tian, Z. S.; Xu, C. X.


Book ID
118782434
Publisher
Springer
Year
2012
Tongue
English
Weight
706 KB
Volume
109
Category
Article
ISSN
0721-7269

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Heterojunction light emitting diodes fab
โœ Bo Hyun Kong; Won Suk Han; Young Yi Kim; Hyung Koun Cho; Jae Hyun Kim ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 787 KB

We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corr