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Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

✍ Scribed by Lu, Taiping; Li, Shuti; Liu, Chao; Zhang, Kang; Xu, Yiqin; Tong, Jinhui; Wu, Lejuan; Wang, Hailong; Yang, Xiaodong; Yin, Yian; Xiao, Guowei; Zhou, Yugang

Book ID: 118257463
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 864 KB
Volume: 100
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3700722

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