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Infrared spectroscopy characterization of 3C–SiC epitaxial layers on silicon

✍ Scribed by Pluchery, Olivier; Costantini, Jean-Marc

Book ID
120038041
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
619 KB
Volume
45
Category
Article
ISSN
0022-3727

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C, molecule deposition onto commercial SOS (silicon on sapphire) wafers with (001) silicon on r-plane (1102) sapphire results in the formation of silicon carbide (Sic), if substrate temperatures of 810°C are exceeded. Elastic recoil spectroscopy indicates the formation of a stoichiometric Sic layer.