## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro
✦ LIBER ✦
Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
✍ Scribed by Stefano Leone; Franziska C. Beyer; Anne Henry; Olof Kordina; Erik Janzén
- Book ID
- 112183052
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 383 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1862-6254
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