Infrared reflectance of GaN films grown on Si(001) substrates
โ Scribed by Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li
- Book ID
- 121790563
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 377 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes
Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify