𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

✍ Scribed by Iller, A.; Jantsch, W.; Marks, J.; Pastuszka, B.; Diduszko, R.; Sadowski, J.


Book ID
118057196
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
123 KB
Volume
8
Category
Article
ISSN
0925-9635

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Infrared reflectance analysis of GaN epi
✍ Z.C. Feng; T.R. Yang; Y.T. Hou πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes