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Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

✍ Scribed by K. Pakuła; A. Wysmołek; K.P. Korona; J.M. Baranowski; R. Stępniewski; I. Grzegory; M. Boćkowski; J. Jun; S. Krukowski; M. Wróblewski; S. Porowski

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
379 KB
Volume
97
Category
Article
ISSN
0038-1098

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✍ Dr. G. Wagner; Dr. V. Gottschalch; Dr. M. Pasmann 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 756 KB

## Abstract GaP LEC substrates doped with sulphur (__N__~D~ – __N__~A~ roughly (3–7) × 10^17^ cm^−3^) were characterized by transmission electron microscopy. This material was found to contain microdefects such as perfect perismatic dislocation loops, and spherical precipitates. Cross‐sectional TEM