Influence of Microdefects on the Generation of Dislocations in Homoepitaxial Gallium Phosphide Layers Grown on LEC Substrates
✍ Scribed by Dr. G. Wagner; Dr. V. Gottschalch; Dr. M. Pasmann
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 756 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
GaP LEC substrates doped with sulphur (N~D~ – N~A~ roughly (3–7) × 10^17^ cm^−3^) were characterized by transmission electron microscopy. This material was found to contain microdefects such as perfect perismatic dislocation loops, and spherical precipitates. Cross‐sectional TEM investigations perfomed have shown that above all perfect dislocation loops lying directly at the substrate/layer interface are sources for the formation of extended dislocations propagating through the epitaxial layer. Using the methods of selective photoetching and AB‐etching on (110) cleavage faces this phenomenon was observed, too.