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Crystallinity studies of GaN/Si films grown at different temperatures by infrared reflectance spectroscopy

โœ Scribed by S.S. Ng; Z. Hassan; M.R. Hashim; M.E. Kordesch


Book ID
113781179
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
238 KB
Volume
91
Category
Article
ISSN
0254-0584

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This paper reports the synthesis and characterization of GaN thin films deposited on Si (1 1 1) substrate, using electrochemical deposition technique below room temperature for different durations. The effects of deposition duration on the morphology, structure and optical properties of GaN thin fil