Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons

✍ Scribed by David A. Patterson, John L. Hennessy

• Publisher: Springer
• Year: 2005
• Tongue: English
• Leaves: 193
• Series: Tracts in Modern Physics
• Edition: 1
• Category: Library

✦ Synopsis

The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry experiment. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and application to organic layer structures is explored.

✦ Table of Contents

front-matter.pdf......Page 0
Introduction......Page 10
References......Page 13
Ellipsometry......Page 16
Jones Matrix Presentation......Page 17
Mueller Matrix Presentation......Page 18
Standard Ellipsometry......Page 20
Generalized Ellipsometry......Page 21
Generalized Brewster Conditions......Page 22
General Description......Page 23
Orthogonal Rotations......Page 24
Bond Polarizability Model......Page 25
Light Propagation in Layered Anisotropic Media......Page 27
Thickness and Dielectric Function......Page 29
Parameterized Model Fit......Page 30
Ellipsometry Test Functions......Page 31
Infrared Ellipsometry......Page 32
References......Page 36
Polar Lattice Resonance Contributions......Page 39
Free-Charge-Carrier Contributions......Page 43
Low-Polarity Mode Contributions......Page 46
Free-Charge-Carrier Magneto-Optic Contributions......Page 47
References......Page 50
Dispersion Relation......Page 52
Example: i-GaAs......Page 54
Surface Polaritons and Surface Guided Waves......Page 55
Dispersion Relation......Page 57
Example: i-GaAs Film on n-GaAs Substrate......Page 59
The Berreman Effect......Page 69
References......Page 71
Anisotropic Substrates......Page 73
Bands of Total Reflection......Page 74
Sapphire (Hexagonal)......Page 76
Stibnite (Orthorhombic)......Page 82
References......Page 85
Free Charge Carriers (p-Type GaAs)......Page 86
Alloying (AlGaInP)......Page 90
Ordering (AlGaInP)......Page 95
GaNP/GaP......Page 101
InGaNAs/GaAs......Page 105
References......Page 109
Wurtzite-Structure Materials (Group-III Nitrides, ZnO)......Page 113
Crystal Quality: Bulk and Epilayer (ZnO)......Page 116
Total-Reflection-Bands and Dielectric Anisotropy (ZnO)......Page 120
Epitaxial Relationship (ZnO)......Page 121
Free Charge Carriers (p- and n-Type GaN)......Page 127
Strain and Alloying (InAlN)......Page 132
Device Heterostructures (Group-III Nitrides)......Page 137
References......Page 147
Magneto-Optic Ellipsometry......Page 150
Experimental Setups......Page 152
Polar MO Setup: Example......Page 153
Oblique MO Setup: Example......Page 155
Experiments......Page 156
i-GaAs(d)/n-GaAs......Page 157
n-B0.03In0.06Ga0.91As(d)/i-GaAs......Page 162
n-GaAs(d)/n-Al0.19Ga0.33In0.48P(d)/i-GaAs......Page 163
References......Page 166
4 x 4 Transfer Matrix Tp for Isotropic Films......Page 168
References......Page 170
4 x 4 Transfer Matrix Tp for Dielectric Homogeneous Films......Page 171
References......Page 172
4 x 4 Transfer Matrix Tp for Magneto-optic Films......Page 173
References......Page 174
4 x 4 Transfer Matrix Tp for Dielectric Helical Films......Page 175
References......Page 180
TM Waves at the Interface Between Two Half-Infinite Media......Page 182
References......Page 184
TM Waves at Two Stratified Interfaces......Page 185
References......Page 190
back-matter.pdf......Page 191