Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons (Springer Tracts in Modern Physics)

✍ Scribed by Mathias Schubert

• Publisher: Springer
• Year: 2005
• Tongue: English
• Leaves: 195
• Edition: 1
• Category: Library

✦ Synopsis

The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.

✦ Table of Contents

front-matter.pdf......Page 1
Introduction......Page 12
References......Page 15
Ellipsometry......Page 18
Jones Matrix Presentation......Page 19
Mueller Matrix Presentation......Page 20
Standard Ellipsometry......Page 22
Generalized Ellipsometry......Page 23
Generalized Brewster Conditions......Page 24
General Description......Page 25
Orthogonal Rotations......Page 26
Bond Polarizability Model......Page 27
Light Propagation in Layered Anisotropic Media......Page 29
Thickness and Dielectric Function......Page 31
Parameterized Model Fit......Page 32
Ellipsometry Test Functions......Page 33
Infrared Ellipsometry......Page 34
References......Page 38
Polar Lattice Resonance Contributions......Page 41
Free-Charge-Carrier Contributions......Page 45
Low-Polarity Mode Contributions......Page 48
Free-Charge-Carrier Magneto-Optic Contributions......Page 49
References......Page 52
Dispersion Relation......Page 54
Example: i-GaAs......Page 56
Surface Polaritons and Surface Guided Waves......Page 57
Dispersion Relation......Page 59
Example: i-GaAs Film on n-GaAs Substrate......Page 61
The Berreman Effect......Page 71
References......Page 73
Anisotropic Substrates......Page 75
Bands of Total Reflection......Page 76
Sapphire (Hexagonal)......Page 78
Stibnite (Orthorhombic)......Page 84
References......Page 87
Free Charge Carriers (p-Type GaAs)......Page 88
Alloying (AlGaInP)......Page 92
Ordering (AlGaInP)......Page 97
GaNP/GaP......Page 103
InGaNAs/GaAs......Page 107
References......Page 111
Wurtzite-Structure Materials (Group-III Nitrides, ZnO)......Page 115
Crystal Quality: Bulk and Epilayer (ZnO)......Page 118
Total-Reflection-Bands and Dielectric Anisotropy (ZnO)......Page 122
Epitaxial Relationship (ZnO)......Page 123
Free Charge Carriers (p- and n-Type GaN)......Page 129
Strain and Alloying (InAlN)......Page 134
Device Heterostructures (Group-III Nitrides)......Page 139
References......Page 149
Magneto-Optic Ellipsometry......Page 152
Experimental Setups......Page 154
Polar MO Setup: Example......Page 155
Oblique MO Setup: Example......Page 157
Experiments......Page 158
i-GaAs(d)/n-GaAs......Page 159
n-B0.03In0.06Ga0.91As(d)/i-GaAs......Page 164
n-GaAs(d)/n-Al0.19Ga0.33In0.48P(d)/i-GaAs......Page 165
References......Page 168
4 x 4 Transfer Matrix Tp for Isotropic Films......Page 170
References......Page 172
4 x 4 Transfer Matrix Tp for Dielectric Homogeneous Films......Page 173
References......Page 174
4 x 4 Transfer Matrix Tp for Magneto-optic Films......Page 175
References......Page 176
4 x 4 Transfer Matrix Tp for Dielectric Helical Films......Page 177
References......Page 182
TM Waves at the Interface Between Two Half-Infinite Media......Page 184
References......Page 186
TM Waves at Two Stratified Interfaces......Page 187
References......Page 192
back-matter.pdf......Page 193