Semiconductor Lasers II: Materials and Structures

✍ Scribed by Eli Kapon

• Publisher: Academic Press
• Year: 1999
• Tongue: English
• Leaves: 397
• Series: Optics and Photonics
• Category: Library

✦ Synopsis

This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals . Key Features * Covers important recent advances in materials, design, fabrication, and device structure of semiconductor lasers--aspects not covered in previously existing literature * Introduces the non-expert to the subject * Useful for professionals engaged in research and development * Numerous schematic and data-containing illustrations * Written by leading experts in the field

✦ Table of Contents

Semiconductor Lasers II: Materials and Structures......Page 4
Copyright Page......Page 5
Contents......Page 6
Preface......Page 12
1.1 Introduction......Page 16
1.2 Material systems for visible lasers......Page 23
1.3 Epitaxial growth and technology......Page 32
1.4 Quantum wells and strain in laser diodes......Page 37
1.5 InGaA1P laser structures......Page 48
1.6 Short-wavelength visible lasers (blue-green and blue)......Page 70
1.7 Conclusions and perspectives toward future......Page 77
Acknowledgments......Page 78
References......Page 79
2.1 Introduction......Page 86
2.2 Wavelength ranges of various laser materials......Page 88
2.3 Growth techniques......Page 92
2.4 Compounds and alloys of III–V type......Page 97
2.5 Compounds and alloys of II–VI type......Page 115
2.6 Compounds and alloys of IV–VI type......Page 120
2.7 Resume of interband laser properties......Page 132
2.8 Hot-hole (unipolar) semiconductor lasers......Page 145
2.9 Unipolar tunneling-based semiconductor lasers......Page 147
2.10 Nonlinear optical conversion in semiconductors......Page 150
2.11 Brief review of applications......Page 151
2.12 Conclusions......Page 155
References......Page 157
3.1 Introduction......Page 172
3.2 Single-mode laser diodes......Page 173
3.3 Wavelength tunable laser diodes......Page 208
3.4 Conclusion......Page 265
References......Page 266
4.1 Introduction......Page 274
4.2 Beam quality......Page 284
4.3 Thermal management......Page 310
References......Page 333
5.1 Introduction......Page 338
5.2 Configurations of surface-emitting lasers......Page 340
5.3 Basics of vertical cavity surface-emitting lasers......Page 344
5.4 Fundamental elements for vertical cavity surface- emitting lasers......Page 348
5.5 Device design and technology......Page 354
5.6 Lasing characteristics of VCSELs......Page 366
5.7 Integrations and applied optical subsystems......Page 373
5.8 Summary......Page 379
References......Page 380
Index......Page 388