## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e
โฆ LIBER โฆ
Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate
โ Scribed by E.D. Palik; R.T. Holm; J.W. Gibson
- Publisher
- Elsevier Science
- Year
- 1977
- Tongue
- English
- Weight
- 535 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0040-6090
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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con