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Infrared and Raman Study of Amorphous Silicon Carbide Thin Films Deposited by Radiofrequency Cosputtering

✍ Scribed by El Khalfi, Abdel-ilah; Ech-chamikh, El Maati; Ijdiyaou, Youssef; Azizan, Mustapha; Essafti, Abdelhadi; Nkhaili, Lahcen; Outzourhit, Abdelkader

Book ID
121319538
Publisher
Taylor and Francis Group
Year
2014
Tongue
English
Weight
336 KB
Volume
47
Category
Article
ISSN
0038-7010

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Preparation of hydrogenated amorphous si
Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition
✍ J Huran; J Ε afrΓ‘nkovΓ‘; A.P. Kobzev πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 252 KB

Thin silicon carbide (SiCI films were prepared by plasma enhanced chemical vapour deposition PECVDI. The structural properties of Sic films were investigated by IR, RBS, and ERD measurement techniques. The results showed that the films contain the typical features found in hydrogenated amorphous Sic