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Influencing factors on the pyroelectric properties of Pb(Zr,Ti)O3 thin film for uncooled infrared detector

โœ Scribed by Dong Heon Kang; Kyung Woo Kim; Sung Yoon Lee; Young Ho Kim; Sang Keun Gil


Book ID
113781067
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
335 KB
Volume
90
Category
Article
ISSN
0254-0584

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Influences of embossing technology on Pb
โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct