๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The influence of sol synthesis conditions on the electrical properties of Pb(Zr, Ti)O3thin films

โœ Scribed by Y. L. Tu; S. J. Milne

Publisher
Springer
Year
1995
Tongue
English
Weight
724 KB
Volume
14
Category
Article
ISSN
0261-8028

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Electrical properties of Pb(Zr,Ti)O3 fil
Electrical properties of Pb(Zr,Ti)O3 films prepared on ITO glass
โœ Hyun-Suk Hwang; Young Park; Won Seok Choi ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 319 KB

Pb(Zr,Ti)O 3 thin films were successfully prepared on a Pt bottom electrode with indium tin oxide coated glass substrates using RF magnetron sputtering. Use of the indium tin oxide coated glass substrate reduced the fatigue characteristics and provided for excellent crystallization of the Pb(Zr,Ti)O

Structural and electrical properties of
Structural and electrical properties of solโ€“gel deposited Pb(Zr0.92Ti0.08)O3 thin films doped with Nb
โœ L. Pintilie; I. Boerasu; M. Pereira; M.J.M. Gomes ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 250 KB

Pb(Zr, Ti)O 3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. It was found that a residu

Influences of embossing technology on Pb
Influences of embossing technology on Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film
โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct