✦ LIBER ✦

Ferroelectric properties of Pb(Zr,Ti)O3 heterolayered thin films for FRAM applications

✍ Scribed by Kyoung-Tae Kim; Chang-Il Kim; Sung-Gap Lee

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 504 KB
Volume: 66
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(02)00980-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial growth of ferroelectric PLZT [

Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin films

✍ Makoto Ishida; Shinji Tsuji; Katsutaka Kimura; Hiroyuki Matsunami; Tetsuro Tanak 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 585 KB

In situ laser deposition of Pb(Zr,Ti)O3

In situ laser deposition of Pb(Zr,Ti)O3 ferroelectric thin films

✍ Xu Jingping; Bai Tiecheng; Li Xingjiao; Zheng Xiangbin; Su Wuda; An Changwu 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 258 KB

Scanning force and friction microscopy o

Scanning force and friction microscopy of ferroelectric Pb(Zr, Ti)O3 thin films

✍ M. Labardi; M. Allegrini; F. Leccabue; B.E. Watts; C. Ascoli; C. Frediani 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 532 KB

Ferroelectric Pb(Zr, Ti)O3 thin films by

Ferroelectric Pb(Zr, Ti)O3 thin films by reactive sputtering from a metallic target

✍ L Blossfeld; W.L Larson; L Kammerdiner; B.T Banko; C.E Wickersham 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 201 KB

Preparation and electrical properties of

Preparation and electrical properties of ferroelectric (Pb,La) (Zr,Ti)O3 thin films by metalorganic chemical vapor deposition

✍ K. Tominaga; Y. Sakashita; H. Nakashima; M. Okada 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 545 KB

Influences of embossing technology on Pb

Influences of embossing technology on Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film

✍ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct