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Comparison study on sol–gel Pb(Zr0.3Ti0.7)O3 and Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared detectors

✍ Scribed by L.L. Sun; O.K. Tan; W.G. Liu; X.F. Chen; W. Zhu

Book ID
108411270
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
271 KB
Volume
66
Category
Article
ISSN
0167-9317

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The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct