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Influences of Ti, TiN, Ta and TaN layers on integration of low-k SiOC:H and Cu

โœ Scribed by Kou-Chiang Tsai; Wen-Fa Wu; Chuen-Guang Chao; Jwo-Lun Hsu; Chiu-Fen Chiang


Book ID
113782134
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
981 KB
Volume
104
Category
Article
ISSN
0254-0584

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๐Ÿ“œ SIMILAR VOLUMES


Integration of Cu and low-k dielectrics:
โœ R.A. Donaton; B. Coenegrachts; M. Maenhoudt; I. Pollentier; H. Struyf; S. Vanhae ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 857 KB

In this work we discuss the importance of selecting the hard mask material and choosing the optimum dry etch and post-CMP clean processes on the integration of Cu and organic low-k dielectrics. The hard mask material plays an important role in the interline capacitance and in the effective dielectri