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Influence of WSi2 polysilicide gate process on integrity and reliability of gate and tunnel oxides

✍ Scribed by J.M. Moragues; B. Sagnes; R. Jerisian; J. Oualid; E. Ciantar; J.L. Liotard; P. Merenda

Book ID
115990352
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
282 KB
Volume
187
Category
Article
ISSN
0022-3093

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We study theoretically the influence of neutral oxygen vacancies on the magnitude of elastic tunneling currents through the ultrathin (1.3 nm) gate oxide of a prototypical metaloxide field-effect transistor with a channel length of 50 nm. For the calculation of the gate currents, we have used transm