Dependence of Fermi level positions at gate and substrate on the reliability of ultrathin MOS gate oxides

✍ Scribed by Tien-Chun Yang; Sachdev, P.; Saraswat, K.C.

• Book ID: 114537785
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 175 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.772491