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Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon

✍ Scribed by Lifshitz, N.

Book ID: 114595098
Publisher: IEEE
Year: 1985
Tongue: English
Weight: 489 KB
Volume: 32
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1985.21987

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