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A comparison of electron sensitive single, Bi-, and tri-level resist schemes for the fabrication of sub-micron gate structures in doped polysilicon

✍ Scribed by H. Willis; A.G. Brown; S.J. Till; S.H. Mortimer


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
464 KB
Volume
6
Category
Article
ISSN
0167-9317

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