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Influence of the thickness of damaged layers on the migration of dopands during laser annealing in implanted silicon

✍ Scribed by Dvurechenskii, A. V. ;Mustafin, T. N. ;Smirnov, L. S. ;Geiler, H.-D. ;Götz, G. ;Jahn, U.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
197 KB
Volume
63
Category
Article
ISSN
0031-8965

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