Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600ยฐC or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by impl
โฆ LIBER โฆ
The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon
โ Scribed by H. Runge; E. F. Krimmel
- Publisher
- Springer
- Year
- 1976
- Tongue
- English
- Weight
- 368 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1432-0630
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