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Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

✍ Scribed by P. Barquinha; A. Pimentel; A. Marques; L. Pereira; R. Martins; E. Fortunato


Book ID
116669223
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
149 KB
Volume
352
Category
Article
ISSN
0022-3093

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Influence of the channel layer thickness
✍ Ai Hua Chen; Hong Tao Cao; Hai Zhong Zhang; Ling Yan Liang; Zhi Min Liu; Zheng Y πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 751 KB

Thin-film transistors (TFTs) were fabricated on SiO 2 /n + -Si substrates using amorphous binary In 2 O 3 -ZnO (a-IZO) films with different thickness for active channel layers deposited by the rf magnetron sputtering at room temperature. The performance of devices was found to be thickness dependent